IRF640 transistor equivalent, n-channel mosfet transistor.
*Designed for low voltage, high speed power switching
applications such as switching regulators, converters, solenoi.
*Drain Current
–ID= 18A@ TC=25℃
*Drain Source Voltage-
: VDSS= 200V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 0.18Ω(Max)
*Fast Switching Speed
*Low Drive Requirement
APPLICATIONS
*Designed for low vo.
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